IPP60R299CP electronic components price datasheet pdf and inventory

Part #: IPP60R299CP
Part Category: Transistors
Manufacturer: Infineon Technologies AG
Description: 11A, 600V, 0.299ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Mfr Package Description GREEN, PLASTIC, TO-220, 3 PIN
REACH Compliant Yes
EU RoHS Compliant Yes
China RoHS Compliant Yes
Status Active
Avalanche Energy Rating (Eas) 290 mJ
Configuration SINGLE WITH BUILT-IN DIODE
Drain Current-Max (Abs) (ID) 11 A
Drain Current-Max (ID) 11 A
Drain-source On Resistance-Max 0.2990 ohm
DS Breakdown Voltage-Min 600 V
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 Cel
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 96 W
Pulsed Drain Current-Max (IDM) 34 A
Qualification Status Not Qualified
Sub Category FET General Purpose Power
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

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